SOI silicon wafer

Product introduction:

Silicon wafer - SOI wafer

1. Diameter 4 to 8 inches

2. Bonding process SOI and Smart cut process SOI can be provided

3. The thickness of the device layer can be as thin as 150nm, and the thickness of the buried oxide layer can be as thin as 1um.

4. SOI silicon wafer is silicon on an insulating substrate. This technology introduces a buried oxide layer between the top silicon and the back substrate. It can be customized according to the parameters of the device layer, buried oxide layer, and bulk silicon layer materials required by the user, as well as the customization of multi-layer SOI.