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SiO2 layer processing

Parameter:


Dimension

Crystal

orientation

Thickness

Edge

trimming

Resistance

Price

quote

2寸100/111350μm±10μmChoice1-50Ω cm198
4寸100/111350μm±10μmChoice1-50Ω cm308
6寸100/111350μm±10μmChoice1-50Ω cm408
8寸100/111350μm±10μmChoice1-50Ω cm608


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